IndiumV3, Main, Repository, bibRecord, 000537

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits

Identifieur interne : 000537 ( Main/Repository ); précédent : 000536; suivant : 000538

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits

Auteurs : RBID : Pascal:13-0216511

Descripteurs français

Pascal (Inist)
- Effet dimensionnel, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Lithographie nanoimpression, Synthèse nanomatériau, Nanoimpression, Arséniure de gallium, Propriété optique, Figure attaque, Epitaxie jet moléculaire, Photoluminescence, Structure fine, Largeur raie, Exciton, Substrat GaAs, 8107T, 8535B, 8107B, 8116, Lithographie douce.

English descriptors

KwdEn :
- Etch pits, Excitons, Fine structure, Gallium arsenides, III-V compound, III-V semiconductors, Indium arsenides, Line widths, Molecular beam epitaxy, Nanoimprint, Nanoimprint lithography, Nanomaterial synthesis, Nanostructured materials, Optical properties, Photoluminescence, Quantum dots, Size effect, Soft lithography.

Abstract

We report on the structural and optical properties of single InAs quantum dots (QDs) formed in etched GaAs pits with different dimensions. The site-controlled QDs were fabricated by molecular beam epitaxy on GaAs(001) surfaces patterned by nanoimprint lithography. We show that the properties of the QDs can be modified by varying the dimensions of the etched GaAs pits. Increasing the pit size resulted in larger QDs and thus in longer photoluminescence wavelengths. However, the fine structure splitting remained unaffected. A photoluminescence linewidth of 41 μeV and average fine structure splitting of 15.7 μeV were obtained for exciton recombination in the single site-controlled QDs.

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Pascal:13-0216511

Le document en format XML

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<author><name sortKey="Tommila, J" uniqKey="Tommila J">J. Tommila</name>
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<s2>33101, Tampere</s2>
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<country>Finlande</country>
<wicri:noRegion>33101, Tampere</wicri:noRegion>
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<author><name sortKey="Schramm, A" uniqKey="Schramm A">A. Schramm</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Optoelectronics Research Centre, Tampere University of Technology, PO Box 692</s1>
<s2>33101, Tampere</s2>
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<author><name sortKey="Hakkarainen, T V" uniqKey="Hakkarainen T">T. V. Hakkarainen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Optoelectronics Research Centre, Tampere University of Technology, PO Box 692</s1>
<s2>33101, Tampere</s2>
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<author><name sortKey="Dumitrescu, M" uniqKey="Dumitrescu M">M. Dumitrescu</name>
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<s2>33101, Tampere</s2>
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<author><name sortKey="Guina, M" uniqKey="Guina M">M. Guina</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Etch pits</term>
<term>Excitons</term>
<term>Fine structure</term>
<term>Gallium arsenides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Line widths</term>
<term>Molecular beam epitaxy</term>
<term>Nanoimprint</term>
<term>Nanoimprint lithography</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Optical properties</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Size effect</term>
<term>Soft lithography</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet dimensionnel</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Lithographie nanoimpression</term>
<term>Synthèse nanomatériau</term>
<term>Nanoimpression</term>
<term>Arséniure de gallium</term>
<term>Propriété optique</term>
<term>Figure attaque</term>
<term>Epitaxie jet moléculaire</term>
<term>Photoluminescence</term>
<term>Structure fine</term>
<term>Largeur raie</term>
<term>Exciton</term>
<term>Substrat GaAs</term>
<term>8107T</term>
<term>8535B</term>
<term>8107B</term>
<term>8116</term>
<term>Lithographie douce</term>
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<front><div type="abstract" xml:lang="en">We report on the structural and optical properties of single InAs quantum dots (QDs) formed in etched GaAs pits with different dimensions. The site-controlled QDs were fabricated by molecular beam epitaxy on GaAs(001) surfaces patterned by nanoimprint lithography. We show that the properties of the QDs can be modified by varying the dimensions of the etched GaAs pits. Increasing the pit size resulted in larger QDs and thus in longer photoluminescence wavelengths. However, the fine structure splitting remained unaffected. A photoluminescence linewidth of 41 μeV and average fine structure splitting of 15.7 μeV were obtained for exciton recombination in the single site-controlled QDs.</div>
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<fA11 i1="01" i2="1"><s1>TOMMILA (J.)</s1>
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<fA11 i1="02" i2="1"><s1>SCHRAMM (A.)</s1>
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<fA11 i1="03" i2="1"><s1>HAKKARAINEN (T. V.)</s1>
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<fA11 i1="04" i2="1"><s1>DUMITRESCU (M.)</s1>
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<fA11 i1="05" i2="1"><s1>GUINA (M.)</s1>
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<fA14 i1="01"><s1>Optoelectronics Research Centre, Tampere University of Technology, PO Box 692</s1>
<s2>33101, Tampere</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA21><s1>2013</s1>
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<fC01 i1="01" l="ENG"><s0>We report on the structural and optical properties of single InAs quantum dots (QDs) formed in etched GaAs pits with different dimensions. The site-controlled QDs were fabricated by molecular beam epitaxy on GaAs(001) surfaces patterned by nanoimprint lithography. We show that the properties of the QDs can be modified by varying the dimensions of the etched GaAs pits. Increasing the pit size resulted in larger QDs and thus in longer photoluminescence wavelengths. However, the fine structure splitting remained unaffected. A photoluminescence linewidth of 41 μeV and average fine structure splitting of 15.7 μeV were obtained for exciton recombination in the single site-controlled QDs.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
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<fC02 i1="04" i2="3"><s0>001B80A16N</s0>
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<s5>01</s5>
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<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="07" i2="X" l="FRE"><s0>Lithographie nanoimpression</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Nanoimprint lithography</s0>
<s5>07</s5>
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<s5>08</s5>
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<fC03 i1="09" i2="X" l="FRE"><s0>Nanoimpression</s0>
<s5>09</s5>
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<s5>09</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>29</s5>
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<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Largeur raie</s0>
<s5>30</s5>
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<s5>30</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s4>INC</s4>
<s5>46</s5>
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<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
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<s4>INC</s4>
<s5>73</s5>
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<s4>INC</s4>
<s5>74</s5>
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<s4>CD</s4>
<s5>96</s5>
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Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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